更多“In semiconductor laser diode, band diagram needs a sufficiently large forward bias to cause populati…”相关的问题
第1题
A typical construction for a ruby laser, which uses an elliptical reflector, and has the ruby crystal at one focus and the pump light at the other focus.
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第2题
Robert Hall and his colleagues, while working at General Electric's Research and Development Center in New York, were among the first groups of researchers to report a working semiconductor laser diode in 1962.
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第3题
A double heterostructure semiconductor laser device has its active region buried within the device in such a way that it is surrounded by low refractive index materials rendering the active region as a waveguide.
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第4题
Photons from the stimulated emission can themselves further stimulate emissions leading to an avalanche of stimulated emissions and coherent photons being emitted.
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第5题
A buried heterostructure laser diode for telecom applications: The active layer (InGaAsP) is surrounded by the wider bandgap, lower refractive index InP material. Layers are grown on an InP substrate.
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第6题
The density of sates g(E) is a step-like function, and is finite at E1 and E1¢.
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第7题
In MQW, most of the light is in the active region.
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第8题
In multiple quantum well (MQW) heterostructure laser diode, electrons are injected by the forward current into quantum wells.
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第9题
At sufficiently high diode currents corresponding to high optical power, the operation becomes single mode.
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第10题
Extraction efficiency = (Loss from the exit cavity end) / (Total loss)
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