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提问人：网友zhenghua809 发布时间：2022-01-06

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We know from Paragraph 4 that the IKEA effect would disappearA．as long as the labor is fru

We know from Paragraph 4 that the IKEA effect would disappear

A．as long as the labor is fruitful and effortful.

B．as the difficulty of the tasks heightens.

C．if the customers are unwilling to pay a premium.

D．when the task is beyond his/her ability.

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更多“We know from Paragraph 4 that the IKEA effect would disappearA．as long as the labor is fru”相关的问题

第1题

2. Consider an n-channel JFET. Draw the transfer characteristics curve. Show that the drain current is independent of drain voltage after pinch-off. If the donor concentration increases in the substrate, then how will it affect the drain current?

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第2题

1. Assume the JFET is Si-based device and has p+ regions doped with 1018 acceptors/cm3 and a channel with 1016 donors/cm3. If the channel half-width a is 1 μm, compare VP with V0. What voltage VGD is required to cause pinch-off when V0 is included? With VG = -3 V, at what value of VD does the current saturate?

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第3题

Find the maximum depletion width, capacitance Cd, and the threshold voltage for an ideal MOS capacitor with a 10 nm gate oxide (SiO2) on p-type Si with Na=1e16 cm-3. Next, include the effects of flat band voltage, assuming an n+ polysilicon gate, the fms=-0.9V, and fixed oxide charge of 5e10q C/cm2. T=300K

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第4题

An Al- gate p-channel MOS transistor is made on an n-type Si substrate with Nd=5e17 cm-3. The SiO2 thickness is 100 Angstrom（埃）in the gate region, and the effective interface charge Qi is 5e10q C/cm2. Find Wm, VFB, and VT. Sketch the C-V curve for this device and give important numbers for the scale.

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第5题

Calculate the VT of a Si-p-channel MOS transistor for an n+-polysilicon gate with silicon oxide thickness =50 Angstrom（埃）, Nd=1e18 cm-3, and a fixed charge of 2e10q C/cm2. Is it an enhancement or depletion-mode device? What B dose is required to change the VT to 0V? Assume a shallow B implant. jms = -0.1 V.

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第6题

For a pnp transistor, its base current is mainly determined by electron transit time.

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第7题

n-type Si can be used for forming the Gunn diodes.

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第8题

If a p-n junction is a heterojunction , it is

A、formed within one material with the different doped type

B、formed between two lattice-matched semiconductors with different band gaps

C、formed within a single semiconductor

D、formed within one material with the same doped type

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第9题

In a p-n junction, the direction of the built-in electric field is from

A、n to p, and the electric field is uniform within the junction.

B、p to n, and the electric field is uniform within the junction.

C、n to p, and the electric field is non-uniform within the junction.

D、p to n, and the electric field is non-uniform within the junction.

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第10题

For an n-type GaAs MESFET, the relationship of the two work functions in the gate junction is

A、Φm>Φs

B、Φm <φs>

C、Φm=Φs

D、none of the above

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