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更多“E. M. Forster's two most noted works, A Passage to India and Howards End, explore the irreconcilabil…”相关的问题
A.10μA
B.20μA
C.30μA
D.40μA
E.50μA
听力原文：M: What do you plan to do for Christmas？
W: No concrete plan, but I think I'll most likely go skiing in Montana and spend a few days in the mountains doing cross-country skiing.
M: I heard you are very good at skiing. Believe it or not, I haven't done any skiing in my life. I wish I could ski just like you.
W: Yeah, you could if you gave it a shot. You know, skiing is my love and the only reason I like it so much is because it gives me great pleasure to speed through the snow.
M: My parents and I vacationed in Montana National Park when I was little and I remembered we had great time going hiking. Now I feel like going back again.
W: Well, since we have two weeks' break for Christmas, you can spend a few days in Montana and I can give you lessons on skiing. That would give you some basics and hopefully you can ski like a professional in a few days.
M: Ski like a professional？ No way. Actually, you do have a good point. I could spend some time in Montana and head back home for Christmas. Perhaps you could spend Christmas at my place too. My parents would like to meet you.
W: That would be great, since my folks will be in Jamaica for Christmas and New Year.
M: Oh, I am anxious to learn how to ski.
W: And you can bet I will be a very strict instructor.
M: No problem. I have been known to be an excellent student during my school year.
W: Well, maybe you won't be this time.
M: Really？ I am looking forward to it now.
W: OK. Then, let's wait and see.
(4)
A．The pleasure of skiing.
B．The Montana National Park.
C．How to learn to ski.
D．How to spend the Christmas holiday.
一个MOS电容器有下列参数：衬底Na=1015cm-3，VFB=2V，xo=100nm，电极面积10μm×20μm，计算：
A、has left
B、has been away from
C、left
D、is away from
E、leaving
F、leaves
一个N沟道MOS晶体管，Z=15μm，L=2μm，Co=6.9×10-8F/cm2．假设线性区漏电流在VD=0.10W时固定不变，测得VG=1.5V时，ID=35μA；VG=2.5V时，ID=75μA．求沟道内载流子迁移率和阈值电压．
一个P沟道铝栅极MOS晶体管具有下列参数：xo=100nm，Nd=2×1015cm-3，Qo=1011cm-2，L=10μm，Z=50μm，μp=230cm2/(V·s)．计算在VG等于-4V和-8V时的IDS，并绘出电流-电压特性．
A.tomorrow
B.check
C.will
D.you
E.out
一个MOS器件的xo=100nm，qφ m = 4.0eV ， qφ s = 4.5eV，二氧化硅相对介电常数εro=4，并且单位面积下有1016cm-2的均匀正氧化层电荷，计算它的平带电压．
#include
using narnespace std；
class ONE{
int e；
public：
ONE()：c(O){cout$amp;ONE(int n)：c(13){cout$amp;}；
class TWO{
ONE oriel；
ONE one2，
public：
TWO(int m)：one2(m){cout$amp;}；
int main(){
TWO t(4)；
return O；
}
运行时的输出结果是
A．3
B．23
C．123
D．213
A: Will that be OK？
B: How much are the tickets？
C: Two second-class is fine, thank you.
D: May I help you？
E: Have a nice trip
W: Good morning. 26____________
M: Hi, we&39;d like two tickets to Fuzhou, please.
W: Fuzhou. Certainly. Travelling today？
M: Yes. W: The next train is at 12: 00. 27___________
M: I’ll take the 12: 00 tickets.
W: Single or return？
M: Two singles. 28___________
W:First-class is 100 yuan and second-class is 80 yuan.
M: 29___________
W: that&39;s 160 yuan, please.
M: Here’s the money
W: And here are your tickets. 30___________
26、__________
27_________
28_________
29_________
30_________
请帮忙给出每个问题的正确答案和分析，谢谢！
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