在VPE、MBE、SEG、LPE、SPE、UHV/CVD、MOCVD中,哪种外延方法能生长杂质陡变分布的薄外延层?
A.MBE
B.VP
C.LPE
D.UHV/CVD
E.SEG、SPE
- · 有5位网友选择 B,占比55.56%
- · 有3位网友选择 A,占比33.33%
- · 有1位网友选择 C,占比11.11%
A.MBE
B.VP
C.LPE
D.UHV/CVD
E.SEG、SPE
A、Having regular physical and mental checkups.
B、Taking medicine that helps boost one's brain.
C、Engaging in known memory repair activities.
D、Staying active both physically and mentally.
DATA SEGMENT
NUM DB 06H
SUM DB?
DATA ENDS
STACK SEGMENT PARA STACK'STACK'
STAPN DW 100 DUP()
STACK ENDS
CODE SEGMENT
ASSUME CS:CODE,DS:DATA,SS:STACK
START:MOV AX,DATA
MOV DS,AX
PUSH AX
PUSH DX
CALL AAA
MOV AH,4CH
INT 21H
AAA PROC
XOR AX,AX
MOV DX,AX
INC DL
MOV CL,NUM
MOV CH,00H
BBB: ADD AL,DL
DAA
INC DL
LOOP BBB
MOV SUM,AL
RET
AAA ENDP
CODE ENDS
END START
(1) 程序执行到MOVAH,4CH语句时,AX=?DX=?SP=?
(2) BBB:ADD AL,DL语句的功能是什么?
(3) 整个程序的功能是什么?
A、Calorie is one way to document our daily food consumptions.
B、Calorie is how much energy we get when we eat.
C、Calorie is one way to document the energy we consume and use.
D、People gain calories when they eat.
A、生长非常薄(<十几nm)的栅氧化层时,氧化速率服从线性规律>
B、温度升高氧化速率迅速增加
C、(111)硅比(100)硅氧化得快
D、有杂质(如Na、P等)存在,氧化速率降低
E、生长的氧化层较薄时,氧化速率服从线性规律
F、生长的氧化层较厚时,氧化速率服从线性线规律
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